Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures

摘要

In this paper we present our progress towards the opto-electroniccharacterization of indium phosphide (InP) nanowire transistors at milli-Kelvin(mK) temperatures. First, we have investigated the electronic transport of theInP nanowires by current-voltage (I-V) spectroscopy as a function oftemperature from 300 K down to 40 K. Second, we show the successful operationof a red light emitting diode (LED) at liquid-Helium (and base) temperature tobe used for opto-electronic device characterization.